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Транзисторы - Биполярные (BJT) - RF

документация 1 245
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Изображение
Номер детали
Производители
Описание
пакет
На складе
Количество
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BGB 540 E6327
Infineon Technologies

TRANSISTOR RF ACT BIAS SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 16dB ~ 17.5dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
пакет: SC-82A, SOT-343
На складе370
3.5V
-
1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
16dB ~ 17.5dB
120mW
-
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
NE85639-T1-R27-A
CEL

SAME AS 2SC4093 NPN SILICON AMPL

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
пакет: TO-253-4, TO-253AA
На складе233
12V
9GHz
1.1dB @ 1GHz
13dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
MS1202
Microsemi Corporation

TRANS RF BIPO 15W 1A M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 118MHz ~ 136MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.4dB
  • Power - Max: 15W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M135
  • Supplier Device Package: M135
пакет: M135
На складе195
35V
118MHz ~ 136MHz
-
8.4dB
15W
5 @ 100mA, 5V
1A
200°C (TJ)
Chassis Mount
M135
M135
MS2272
Microsemi Corporation

TRANS RF BIPO 940W 24A M216

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.6dB
  • Power - Max: 940W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 24A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M216
  • Supplier Device Package: M216
пакет: M216
На складе245
65V
960MHz ~ 1.215GHz
-
7.6dB
940W
10 @ 5A, 5V
24A
200°C (TJ)
Chassis Mount
M216
M216
2SC5231A-9-TL-E
ON Semiconductor

TRANS NPN BIPO 70MA 10V SMCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB ~ 8.5dB @ 1GHz
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Gull Wing
  • Supplier Device Package: SMCP
пакет: 3-SMD, Gull Wing
На складе274
10V
7GHz
1dB @ 1GHz
12dB ~ 8.5dB @ 1GHz
100mW
135 @ 20mA, 5V
70mA
150°C (TJ)
Surface Mount
3-SMD, Gull Wing
SMCP
NE68133-T1B-R34-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
пакет: TO-236-3, SC-59, SOT-23-3
На складе215
10V
9GHz
1.2dB @ 1GHz
13dB
200mW
80 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NE68033-T1B-R44-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
пакет: TO-236-3, SC-59, SOT-23-3
На складе472
10V
10GHz
1.8dB @ 2GHz
9dB
200mW
80 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hotMRF544
Microsemi Corporation

TRANS NPN 70V 400MA TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 3.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-39
  • Supplier Device Package: TO-39
пакет: TO-39
На складе274
70V
1.5GHz
-
13.5dB
3.5W
15 @ 50mA, 6V
400mA
-
Through Hole
TO-39
TO-39
hotAT-42086-TR1G
Broadcom Limited

TRANS NPN BIPO 12V 80MA 86-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
  • Gain: 9dB ~ 13dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-86
  • Supplier Device Package: 86 Plastic
пакет: SOT-86
На складе34 722
12V
8GHz
1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
9dB ~ 13dB
500mW
30 @ 35mA, 8V
80mA
150°C (TJ)
Surface Mount
SOT-86
86 Plastic
MPSH17_D27Z
Fairchild/ON Semiconductor

TRANS NPN 15V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
пакет: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
На складе216
15V
800MHz
6dB @ 200MHz
24dB
350mW
25 @ 5mA, 10V
-
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLS2731-20,114
Ampleon USA Inc.

TRANSISTOR RF POWER SOT445C

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 3.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-445C
  • Supplier Device Package: CDFM2
пакет: SOT-445C
На складе235
75V
3.1GHz
-
10dB
270W
40 @ 500mA, 5V
3A
200°C (TJ)
Surface Mount
SOT-445C
CDFM2
KSC2786OBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: 18dB ~ 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
пакет: TO-226-3, TO-92-3 Short Body
На складе176
20V
600MHz
3dB ~ 5dB @ 100MHz
18dB ~ 22dB
250mW
70 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
SD1477
STMicroelectronics

TRANSISTOR NPN RF BIPO VHF 6LEAD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 6dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M111
  • Supplier Device Package: M111
пакет: M111
На складе219
18V
-
-
6dB
270W
10 @ 5A, 5V
20A
200°C (TJ)
Surface Mount
M111
M111
hotSD1433
STMicroelectronics

TRANSISTOR NPN RF UHF 4LEAD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 58W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M122
  • Supplier Device Package: M122
пакет: M122
На складе281
16V
-
-
7dB
58W
10 @ 1A, 5V
2.5A
200°C (TJ)
Chassis, Stud Mount
M122
M122
MPS3563G
ON Semiconductor

TRANS NPN RF SS 12V TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
  • Gain: 14dB @ 200MHz
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
пакет: TO-226-3, TO-92-3 (TO-226AA)
На складе270
12V
1.5GHz
6.5dB @ 60MHz
14dB @ 200MHz
350W
20 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
NE68139R-T1-A
CEL

TRANSISTOR NPN 1GHZ SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
пакет: SOT-143R
На складе373
10V
9GHz
1.2dB ~ 2dB @ 1GHz
13.5dB
200mW
50 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
BFS17A,235
NXP

TRANS NPN 15V 25MA 3GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 2.8GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 800MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
пакет: TO-236-3, SC-59, SOT-23-3
На складе126
15V
2.8GHz
2.5dB @ 800MHz
-
300mW
25 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFG310/XR,215
NXP

TRANS NPN 4.5V 18GHZ SOT143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB @ 2GHz
  • Gain: 18dB
  • Power - Max: 60mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
пакет: SOT-143R
На складе485
6V
14GHz
1dB @ 2GHz
18dB
60mW
60 @ 5mA, 3V
10mA
175°C (TJ)
Surface Mount
SOT-143R
SOT-143R
BFQ 19S E6327
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
  • Gain: 7dB ~ 11.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
  • Current - Collector (Ic) (Max): 210mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89
пакет: TO-243AA
На складе499
15V
5.5GHz
1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
7dB ~ 11.5dB
1W
70 @ 70mA, 8V
210mA
150°C (TJ)
Surface Mount
TO-243AA
PG-SOT89
BFP450H6433XTMA1
Infineon Technologies

TRANS RF NPN 4.5V 100MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 24GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
пакет: SC-82A, SOT-343
На складе140
5V
24GHz
1.25dB @ 1.8GHz
15.5dB
450mW
60 @ 50mA, 4V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP405FH6327XTSA1
Infineon Technologies

TRANS RF NPN 4.5V 25MA TSFP-4

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
пакет: 4-SMD, Flat Leads
На складе385
-
-
-
-
-
-
-
-
Surface Mount
4-SMD, Flat Leads
4-TSFP
TAN500
Microsemi Corporation

TRANS RF BIPO 2500W 50A 55ST-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 2500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 50A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
пакет: 55ST
На складе362
75V
960MHz ~ 1.215GHz
-
9dB
2500W
20 @ 1A, 5V
50A
200°C (TJ)
Chassis Mount
55ST
55ST
UMIL80
Microsemi Corporation

TRANS RF BIPO 220W 12A 55HU-2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 31V
  • Frequency - Transition: 200MHz ~ 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB ~ 9.5dB
  • Power - Max: 220W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55HV
  • Supplier Device Package: 55HV
пакет: 55HV
На складе417
31V
200MHz ~ 500MHz
-
9dB ~ 9.5dB
220W
10 @ 1A, 5V
12A
200°C (TJ)
Chassis Mount
55HV
55HV
MS1227
Microsemi Corporation

TRANS RF BIPO 80W 4.5A M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 15dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
пакет: M113
На складе124
18V
30MHz
-
15dB
80W
200 @ 1A, 5V
4.5A
200°C (TJ)
Chassis Mount
M113
M113
SD1274
STMicroelectronics

TRANS NPN RF MICROWAVE VHF M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M135
  • Supplier Device Package: M135
пакет: M135
На складе286
16V
-
-
10dB
70W
20 @ 250mA, 5V
8A
200°C (TJ)
Surface Mount
M135
M135
AT-30511-TR2G
Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
  • Gain: 14dB ~ 16dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 8mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
пакет: TO-253-4, TO-253AA
На складе477
5.5V
-
1.1dB ~ 1.4dB @ 900MHz
14dB ~ 16dB
100mW
70 @ 1mA, 2.7V
8mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
NE68039R-T1
CEL

TRANS NPN 2GHZ SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
  • Gain: 6.5dB ~ 11dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
пакет: SOT-143R
На складе4 941
10V
10GHz
1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
6.5dB ~ 11dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
hot2SC5226A-4-TL-E
ON Semiconductor

TRANS NPN BIPO VHF-UHF MCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-MCP
пакет: SC-70, SOT-323
На складе6 400
10V
7GHz
1dB @ 1GHz
12dB
150mW
90 @ 20mA, 5V
70mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
3-MCP
BFT92,215
NXP

TRANS PNP 25MA 15V 5GHZ SOT23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 500MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 14mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
пакет: TO-236-3, SC-59, SOT-23-3
На складе43 231
15V
5GHz
2.5dB @ 500MHz
-
300mW
20 @ 14mA, 10V
25mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFP650FH6327XTSA1
Infineon Technologies

TRANS RF NPN 42GHZ 4.5V 4TSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
  • Gain: 11dB ~ 21.5dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
пакет: 4-SMD, Flat Leads
На складе8 932
4.5V
42GHz
0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
11dB ~ 21.5dB
500mW
110 @ 80mA, 3V
150mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP